353,984 research outputs found

    Cross-Correlation-Function-Based Multipath Mitigation Method for Sine-BOC Signals

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    Global Navigation Satellite Systems (GNSS) positioning accuracy indoor and urban canyons environments are greatly affected by multipath due to distortions in its autocorrelation function. In this paper, a cross-correlation function between the received sine phased Binary Offset Carrier (sine-BOC) modulation signal and the local signal is studied firstly, and a new multipath mitigation method based on cross-correlation function for sine-BOC signal is proposed. This method is implemented to create a cross-correlation function by designing the modulated symbols of the local signal. The theoretical analysis and simulation results indicate that the proposed method exhibits better multipath mitigation performance compared with the traditional Double Delta Correlator (DDC) techniques, especially the medium/long delay multipath signals, and it is also convenient and flexible to implement by using only one correlator, which is the case of low-cost mass-market receivers

    Prandtl number of lattice Bhatnagar-Gross-Krook fluid

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    The lattice Bhatnagar-Gross-Krook modeled fluid has an unchangeable unit Prandtl number. A simple method is introduced in this letter to formulate a flexible Prandtl number for the modeled fluid. The effectiveness was demonstrated by numerical simulations of the Couette flow.Comment: 4 pages, uuencoded postscript fil

    Allowable silicon wafer thickness versus diameter for ingot rotation ID wafering

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    Inner diameter (ID) wafering of ingot rotation reduce the ID saw blade diameter was investigated. The blade thickness can be reduced, resulting in minimal kerf loss. However, significant breakage of wafers occurs during the rotation wafering as the wafer thickness decreases. Fracture mechanics was used to develop an equation relating wafer thickness, diameter and fracture behavior at the point of fracture by using a model of a wafer, supported by a center column and subjected to a cantilever force. It is indicated that the minimum allowable wafer thickness does not increase appreciably with increasing wafer diameter and that fracture through the thickness rather than through the center supporting column limits the minimum allowable wafer thickness. It is suggested that the minimum allowable wafer thickness can be reduced by using a vacuum chuck on the wafer surface to enhance cleavage fracture of the center core and by using 111 ingots

    Chi gong--An exercise for internal health

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